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Freescale Semiconductor Technical Data
Document Number: MRF7S19120N Rev. 0, 9/2007
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN - PCS/cellular radio and WLL applications. * Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA, Pout = 36 Watts Avg., Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain -- 18 dB Drain Efficiency -- 32% Device Output Signal PAR -- 6.1 dB @ 0.01% Probability on CCDF ACPR @ 5 MHz Offset -- - 38.5 dBc in 3.84 MHz Channel Bandwidth * Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 120 Watts CW Peak Tuned Output Power * Pout @ 1 dB Compression Point w 120 W CW Features * 100% PAR Tested for Guaranteed Output Power Capability * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched for Ease of Use * Integrated ESD Protection * Greater Negative Gate - Source Voltage Range for Improved Class C Operation * Designed for Digital Predistortion Error Correction Systems * 225C Capable Plastic Package * RoHS Compliant * In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF7S19120NR1
1930 - 1990 MHz, 36 W AVG., 28 V SINGLE W - CDMA LATERAL N - CHANNEL RF POWER MOSFET
CASE 1730 - 02 TO - 270 WBL - 4 PLASTIC
Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature
(1,2)
Symbol VDSS VGS VDD Tstg TC TJ
Value - 0.5, +65 - 6.0, +10 32, +0 - 65 to +150 150 225
Unit Vdc Vdc Vdc C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 81C, 120 W CW Case Temperature 80C, 36 W CW Symbol RJC Value (2,3) 0.43 0.51 Unit C/W
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Design Tools (Software & Tools)/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
This document contains information on a preproduction product. Specifications and information herein are subject to change without notice.
(c) Freescale Semiconductor, Inc., 2007. All rights reserved.
MRF7S19120NR1 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 2 (Minimum) A (Minimum) IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit C
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 270 Adc) Gate Quiescent Voltage (VDD = 28 Vdc, ID = 1200 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2.7 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 28 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz) Crss Coss Ciss -- -- -- 1.65 600 1.03 -- -- -- pF pF pF VGS(th) VGS(Q) VDS(on) 1.2 2 0.15 2 2.7 0.275 2.7 3.5 0.35 Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA, Pout = 36 W Avg., f = 1930 MHz and f = 1990 MHz, Single - Carrier W - CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Drain Efficiency Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss 1. Part internally matched both on input and output. (continued) Gps D PAR ACPR IRL 16.5 30 5.7 -- -- 18 32 6.1 - 38.5 - 10 19.5 36 -- - 35.5 -7 dB % dB dBc dB
MRF7S19120NR1 2 RF Device Data Freescale Semiconductor
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted) (continued)
Characteristic Video Bandwidth @ 120 W PEP Pout where IM3 = - 30 dBc (Tone Spacing from 100 kHz to VBW) IMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both sidebands) Gain Flatness in 60 MHz Bandwidth @ Pout = 36 W Avg. Average Deviation from Linear Phase in 60 MHz Bandwidth @ Pout = 120 W CW Average Group Delay @ Pout = 120 W CW, f = 1960 MHz Part - to - Part Insertion Phase Variation @ Pout = 120 W CW, f = 1960 MHz, Six Sigma Window Gain Variation over Temperature ( - 30C to +85C) Output Power Variation over Temperature ( - 30C to +85C) Symbol VBW -- 20 -- Min Typ Max Unit MHz Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA, 1930 - 1990 MHz Bandwidth
GF Delay G P1dB
-- -- -- -- -- --
0.495 0.914 1.98 33.9 0.016 0.009
-- -- -- -- -- --
dB ns dB/C dBm/C
MRF7S19120NR1 RF Device Data Freescale Semiconductor 3
VSUPPLY VBIAS + C1 R1 R2 C2 C3 Z7 Z8 Z9 Z10 Z11 C8 Z12 RF OUTPUT C4 C5 C6
R3 RF INPUT Z1 C7 DUT Z2 Z3 Z4 Z5 Z6
C9
C10
C11
Z1 Z2 Z3 Z4 Z5 Z6 Z7
0.084 0.084 0.362 0.612 1.000 1.000 0.880
x 0.744 Microstrip x 0.797 Microstrip x 0.100 Microstrip x 0.380 Microstrip x 0.125 Microstrip x 0.090 Microstrip x 0.111 Microstrip
Z8 Z9 Z10 Z11 Z12 PCB
0.880 x 0.210 Microstrip 0.730 x 0.350 Microstrip 0.440 x 0.130 Microstrip 0.084 x 0.700 Microstrip 0.084 x 0.743 Microstrip Arlon CuClad 250GX - 0300 - 55 - 22, 0.030, r = 2.55
Figure 1. MRF7S19120NR1 Test Circuit Schematic
Table 6. MRF7S19120NR1 Test Circuit Component Designations and Values
Part C1 C2 C3, C4, C8, C9 C5, C6, C10, C11 C7 R1 R2 R3 Description 10 F, 35 V Tantalum Capacitor 0.01 F Chip Capacitor 5.1 pF Chip Capacitors 10 F Chip Capacitors 11 pF Chip Capacitor 1 K, 1/4 W Chip Resistor 10 K, 1/4 W Chip Resistor 10 , 1/4 W Chip Resistor Part Number T491D106K035AT C1825C103J1GAC ATC100B5R1BT500XT GRM55DR61H106KA88L ATC100B110BT500XT CRCW12061001FKEA CRCW12061002FKEA CRCW120610R0FKEA Manufacturer Kemet Kemet ATC Murata ATC Vishay Vishay Vishay
MRF7S19120NR1 4 RF Device Data Freescale Semiconductor
R1 C2 R2 C1 C3 R3
C4
C5
C6
C7 CUT OUT AREA
C8
C10
C11
MRF7S19120N Rev. 3
C9
Figure 2. MRF7S19120NR1 Test Circuit Component Layout
MRF7S19120NR1 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
D, DRAIN EFFICIENCY (%) 18.4 18.3 18.2 Gps, POWER GAIN (dB) 18.1 18 17.9 17.8 17.7 17.6 17.5 17.4 1880 1900 1920 IRL 1940 1960 1980 2000 2020 Gps D VDD = 28 Vdc, Pout = 36 W (Avg.), IDQ = 1200 mA Single -Carrier W-CDMA, 3.84 MHz Channel Bandwidth, PAR = 7.5 dB @ 0.01% Probability (CCDF) PARC 36 35 34 33 32 -0.5 -1 -1.5 -2 -2.5 -3 2040 PARC (dB)
0 -4 -8 -12 -16 -20
f, FREQUENCY (MHz)
Figure 3. Output Peak - to - Average Ratio Compression (PARC) Broadband Performance @ Pout = 36 Watts Avg.
D D, DRAIN EFFICIENCY (%) 17.6 17.4 17.2 Gps, POWER GAIN (dB) 17 16.8 16.6 16.4 16.2 16 15.8 15.6 1880 1900 1920 1940 PARC IRL 1960 1980 2000 2020 VDD = 28 Vdc, Pout = 59 W (Avg.), IDQ = 1200 mA Single -Carrier W-CDMA, 3.84 MHz Channel Bandwidth, PAR = 7.5 dB @ 0.01% Probability (CCDF) Gps 45 44 43 42 41 -2 -2.5 -3 -3.5 -4 -4.5 2040 PARC (dB)
0 -4 -8 -12 -16 -20
f, FREQUENCY (MHz)
Figure 4. Output Peak - to - Average Ratio Compression (PARC) Broadband Performance @ Pout = 59 Watts Avg.
19 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 1800 mA 18 Gps, POWER GAIN (dB) 1500 mA 1200 mA 17 900 mA 16 -10 VDD = 28 Vdc, f1 = 1955 MHz, f2 = 1965 MHz Two -Tone Measurements, 10 MHz Tone Spacing -20
-30 IDQ = 600 mA -40 350 mA 1200 mA 1500 mA 900 mA
15 14 1
600 mA VDD = 28 Vdc, f1 = 1955 MHz, f2 = 1965 MHz Two -Tone Measurements, 10 MHz Tone Spacing 10 Pout, OUTPUT POWER (WATTS) PEP 100 300
-50
-60 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 300
Figure 5. Two - Tone Power Gain versus Output Power
Figure 6. Third Order Intermodulation Distortion versus Output Power
MRF7S19120NR1 6 RF Device Data Freescale Semiconductor
IRL, INPUT RETURN LOSS (dB)
IRL, INPUT RETURN LOSS (dB)
TYPICAL CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) -10 VDD = 28 Vdc, IDQ = 1200 mA f1 = 1955 MHz, f2 = 1965 MHz Two -Tone Measurements, 10 MHz Tone Spacing -10 VDD = 28 Vdc, Pout = 120 W (PEP), IDQ = 1200 mA Two -Tone Measurements (f1 + f2)/2 = Center Frequency of 1960 MHz IM3 -U -30 IM3 -L IM5 -U IM5 -L IM7 -U -50 IM7 -L
-20
-20
-30
-40 3rd Order -50 5th Order 7th Order -60 1 10 100 400 Pout, OUTPUT POWER (WATTS) PEP
-40
-60 1 10 TWO -TONE SPACING (MHz) 100
Figure 7. Intermodulation Distortion Products versus Output Power
1 OUTPUT COMPRESSION AT THE 0.01% PROBABILITY ON CCDF (dB)
Figure 8. Intermodulation Distortion Products versus Tone Spacing
50 45 D, DRAIN EFFICIENCY (%) Ideal
VDD = 28 Vdc, IDQ = 1200 mA f = 1960 MHz, Input PAR = 7.5 dB
0
-1 -1 dB = 32.46 W
40
-2
35 -2 dB = 43.76 W Actual -3 dB = 57.64 W
-3
30
-4 20 30 40 50 60 Pout, OUTPUT POWER (WATTS)
25 70
Figure 9. Output Peak - to - Average Ratio Compression (PARC) versus Output Power
ACPR, UPPER AND LOWER RESULTS (dBc)
0 -10 -20
19 VDD = 28 Vdc, IDQ = 1200 mA, f = 1960 MHz Single -Carrier W-CDMA, PAR = 7.5 dB, ACPR @ 5 MHz Offset in 3.84 MHz Integrated Bandwidth Uncorrected, Upper and Lower TC = -30_C Gps, POWER GAIN (dB) 18 17 85_C 16 15 14 13 38 40 42 44 46 48 50 1 10 Pout, OUTPUT POWER (WATTS) CW 100 Pout, OUTPUT POWER (dBm) D VDD = 28 Vdc IDQ = 1200 mA f = 1960 MHz 25_C Gps
60 -30_C 25_C 50 85_C 40 30 20 10 0 300 D, DRAIN EFFICIENCY (%)
-30 -40 -50 -60 -70 36 DPD Corrected with Memory Correction DPD Corrected No Memory Correction
Figure 10. Digital Predistortion Correction versus ACPR and Output Power
Figure 11. Power Gain and Drain Efficiency versus CW Output Power
MRF7S19120NR1 RF Device Data Freescale Semiconductor 7
TYPICAL CHARACTERISTICS
19 18 Gps, POWER GAIN (dB) 17 16 15 14 VDD = 24 V 13 0 40 80 120 160 200 Pout, OUTPUT POWER (WATTS) CW 28 V IDQ = 1200 mA f = 1960 MHz 107 108
MTTF (HOURS) 32 V
106
105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 36 W Avg., and D = 32%. MTTF calculator available at http:/www.freescale.com/rf. Select Tools/ Software/Application Software/Calculators to access the MTTF calcu- lators by product.
Figure 12. Power Gain versus Output Power
Figure 13. MTTF versus Junction Temperature
W - CDMA TEST SIGNAL
100 10 -30 PROBABILITY (%) 1 0.1 0.01 0.001 0.0001 0 W-CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ "5 MHz Offset. PAR = 7.5 dB @ 0.01% Probability on CCDF 2 4 6 8 10 Compressed Output Signal @ 36 W Pout Input Signal -50 (dB) -60 -70 -80 -90 -100 -110 -9 -7.2 -5.4 -3.6 -1.8 0 1.8 3.6 5.4 7.2 9 f, FREQUENCY (MHz) -ACPR in 3.84 MHz Integrated BW -ACPR in 3.84 MHz Integrated BW -40 -10 -20 3.84 MHz Channel BW
PEAK -TO-AVERAGE (dB)
Figure 14. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test Signal
Figure 15. Single - Carrier W - CDMA Spectrum
MRF7S19120NR1 8 RF Device Data Freescale Semiconductor
f = 2040 MHz Zo = 5
Zload
f = 1880 MHz f = 2040 MHz
Zsource
f = 1880 MHz
VDD = 28 Vdc, IDQ = 1200 mA, Pout = 36 W Avg. f MHz 1880 1900 1920 1940 1960 1980 2000 2020 2040 Zsource W 2.388 - j3.365 2.337 - j3.215 2.278 - j3.070 2.229 - j2.917 2.190 - j2.743 2.129 - j2.572 2.079 - j2.410 2.044 - j2.242 2.006 - j2.088 Zload W 2.091 - j0.905 2.012 - j0.712 1.957 - j0.515 1.912 - j0.312 1.887 - j0.089 1.848 + j0.121 1.819 + j0.327 1.789 + j0.540 1.761 + j0.756
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network
Input Matching Network
Device Under Test
Z
source
Z
load
Figure 16. Series Equivalent Source and Load Impedance
MRF7S19120NR1 RF Device Data Freescale Semiconductor 9
PACKAGE DIMENSIONS
MRF7S19120NR1 10 RF Device Data Freescale Semiconductor
MRF7S19120NR1 RF Device Data Freescale Semiconductor 11
MRF7S19120NR1 12 RF Device Data Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 Date Sept. 2007 * Initial Release of Data Sheet Description
MRF7S19120NR1 RF Device Data Freescale Semiconductor 13
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MRF7S19120NR1
Rev. 14 0, 9/2007 Document Number: MRF7S19120N
RF Device Data Freescale Semiconductor

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